Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda, Kazunori Hagiwara, Osamu Ichikawa, Katsuaki Tanabe, Takashi Yahiro, Hiroshi Ohkawa, Toshio Ohsawa, Hiroshi Komiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

"CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×10 5 Pa, 3.3- 10 mol% HCl/H 2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×10 5 Pa, 0.1- 9 mol% SiHCl 3/H 2 or SiCl 4/H 2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages308-311
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period02/5/1902/5/24

Fingerprint

Chemical vapor deposition
vapor deposition
chlorosilanes
Etching
etching
recycling
operating temperature
contaminants
Recycling
Chemical activation
chlorides
Thermodynamics
activation
Crystalline materials
Thin films
thermodynamics
Kinetics
kinetics
synthesis
thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Noda, S., Hagiwara, K., Ichikawa, O., Tanabe, K., Yahiro, T., Ohkawa, H., ... Komiyama, H. (2002). Closed recycle CVD process for mass production of SOG-Si from MG-Si. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 308-311)

Closed recycle CVD process for mass production of SOG-Si from MG-Si. / Noda, Suguru; Hagiwara, Kazunori; Ichikawa, Osamu; Tanabe, Katsuaki; Yahiro, Takashi; Ohkawa, Hiroshi; Ohsawa, Toshio; Komiyama, Hiroshi.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 308-311.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Noda, S, Hagiwara, K, Ichikawa, O, Tanabe, K, Yahiro, T, Ohkawa, H, Ohsawa, T & Komiyama, H 2002, Closed recycle CVD process for mass production of SOG-Si from MG-Si. in Conference Record of the IEEE Photovoltaic Specialists Conference. pp. 308-311, 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States, 02/5/19.
Noda S, Hagiwara K, Ichikawa O, Tanabe K, Yahiro T, Ohkawa H et al. Closed recycle CVD process for mass production of SOG-Si from MG-Si. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 308-311
Noda, Suguru ; Hagiwara, Kazunori ; Ichikawa, Osamu ; Tanabe, Katsuaki ; Yahiro, Takashi ; Ohkawa, Hiroshi ; Ohsawa, Toshio ; Komiyama, Hiroshi. / Closed recycle CVD process for mass production of SOG-Si from MG-Si. Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. pp. 308-311
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AU - Yahiro, Takashi

AU - Ohkawa, Hiroshi

AU - Ohsawa, Toshio

AU - Komiyama, Hiroshi

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