Abstract
Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.
Original language | English |
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Pages (from-to) | 916-921 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 255 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2008 Dec 15 |
Externally published | Yes |
Keywords
- Cluster
- Depth profiling
- Ir (CO)
- Metal cluster complex
- SIMS
- Sputtering
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films