Cluster SIMS using metal cluster complex ions

Yukio Fujiwara, Kouji Kondou, Yoshikazu Teranishi, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir4(CO)7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O2 + ion beams, Ir4(CO)7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10-4 Pa. Furthermore, it was confirmed that Ir4(CO)7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

Original languageEnglish
Pages (from-to)916-921
Number of pages6
JournalApplied Surface Science
Volume255
Issue number4
DOIs
Publication statusPublished - 2008 Dec 15
Externally publishedYes

Fingerprint

Carbon Monoxide
Secondary ion mass spectrometry
Ion beams
Metals
Silicon
Ions
Sputtering
Organometallic Compounds
Boron
Organometallics
Polymethyl Methacrylate
Ion sources
Polymethyl methacrylates
Molecular weight
Irradiation
Oxygen
Chemical analysis

Keywords

  • Cluster
  • Depth profiling
  • Ir(CO)
  • Metal cluster complex
  • SIMS
  • Sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Fujiwara, Y., Kondou, K., Teranishi, Y., Watanabe, K., Nonaka, H., Saito, N., ... Tomita, M. (2008). Cluster SIMS using metal cluster complex ions. Applied Surface Science, 255(4), 916-921. https://doi.org/10.1016/j.apsusc.2008.05.105

Cluster SIMS using metal cluster complex ions. / Fujiwara, Yukio; Kondou, Kouji; Teranishi, Yoshikazu; Watanabe, Kouji; Nonaka, Hidehiko; Saito, Naoaki; Itoh, Hiroshi; Fujimoto, Toshiyuki; Kurokawa, Akira; Ichimura, Shingo; Tomita, Mitsuhiro.

In: Applied Surface Science, Vol. 255, No. 4, 15.12.2008, p. 916-921.

Research output: Contribution to journal › Article

Fujiwara, Y, Kondou, K, Teranishi, Y, Watanabe, K, Nonaka, H, Saito, N, Itoh, H, Fujimoto, T, Kurokawa, A, Ichimura, S & Tomita, M 2008, 'Cluster SIMS using metal cluster complex ions', Applied Surface Science, vol. 255, no. 4, pp. 916-921. https://doi.org/10.1016/j.apsusc.2008.05.105
Fujiwara Y, Kondou K, Teranishi Y, Watanabe K, Nonaka H, Saito N et al. Cluster SIMS using metal cluster complex ions. Applied Surface Science. 2008 Dec 15;255(4):916-921. https://doi.org/10.1016/j.apsusc.2008.05.105
Fujiwara, Yukio ; Kondou, Kouji ; Teranishi, Yoshikazu ; Watanabe, Kouji ; Nonaka, Hidehiko ; Saito, Naoaki ; Itoh, Hiroshi ; Fujimoto, Toshiyuki ; Kurokawa, Akira ; Ichimura, Shingo ; Tomita, Mitsuhiro. / Cluster SIMS using metal cluster complex ions. In: Applied Surface Science. 2008 ; Vol. 255, No. 4. pp. 916-921.
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AB - Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir4(CO)7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O2 + ion beams, Ir4(CO)7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10-4 Pa. Furthermore, it was confirmed that Ir4(CO)7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

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