Cluster SIMS using metal cluster complex ions

Yukio Fujiwara*, Kouji Kondou, Yoshikazu Teranishi, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

Original languageEnglish
Pages (from-to)916-921
Number of pages6
JournalApplied Surface Science
Volume255
Issue number4
DOIs
Publication statusPublished - 2008 Dec 15
Externally publishedYes

Keywords

  • Cluster
  • Depth profiling
  • Ir (CO)
  • Metal cluster complex
  • SIMS
  • Sputtering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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