Cluster SIMS using metal cluster complex ions

Yukio Fujiwara; Kouji Kondou; Yoshikazu Teranishi; Kouji Watanabe; Hidehiko Nonaka; Naoaki Saito; Hiroshi Itoh; Toshiyuki Fujimoto; Akira Kurokawa; Shingo Ichimura; Mitsuhiro Tomita

doi:10.1016/j.apsusc.2008.05.105

Cluster SIMS using metal cluster complex ions

Yukio Fujiwara, Kouji Kondou, Yoshikazu Teranishi, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

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5 Citations (Scopus)

Abstract

Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir ₄ (CO) ₇ ⁺ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar ⁺ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O ₂ ⁺ ion beams, Ir ₄ (CO) ₇ ⁺ ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 ^-4 Pa. Furthermore, it was confirmed that Ir ₄ (CO) ₇ ⁺ ion beams significantly enhanced secondary ion intensity in high-mass region.

Original language	English
Pages (from-to)	916-921
Number of pages	6
Journal	Applied Surface Science
Volume	255
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2008.05.105
Publication status	Published - 2008 Dec 15

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Keywords

Cluster
Depth profiling
Ir (CO)
Metal cluster complex
SIMS
Sputtering

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Fujiwara, Y., Kondou, K., Teranishi, Y., Watanabe, K., Nonaka, H., Saito, N., Itoh, H., Fujimoto, T., Kurokawa, A., Ichimura, S., & Tomita, M. (2008). Cluster SIMS using metal cluster complex ions. Applied Surface Science, 255(4), 916-921. https://doi.org/10.1016/j.apsusc.2008.05.105

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title = "Cluster SIMS using metal cluster complex ions",

abstract = " Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.",

keywords = "Cluster, Depth profiling, Ir (CO), Metal cluster complex, SIMS, Sputtering",

author = "Yukio Fujiwara and Kouji Kondou and Yoshikazu Teranishi and Kouji Watanabe and Hidehiko Nonaka and Naoaki Saito and Hiroshi Itoh and Toshiyuki Fujimoto and Akira Kurokawa and Shingo Ichimura and Mitsuhiro Tomita",

year = "2008",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2008.05.105",

language = "English",

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T1 - Cluster SIMS using metal cluster complex ions

AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Teranishi, Yoshikazu

AU - Watanabe, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Itoh, Hiroshi

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

PY - 2008/12/15

Y1 - 2008/12/15

N2 - Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

AB - Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

KW - Cluster

KW - Depth profiling

KW - Ir (CO)

KW - Metal cluster complex

KW - SIMS

KW - Sputtering

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Access to Document

10.1016/j.apsusc.2008.05.105