Cluster SIMS using metal cluster complex ions

Yukio Fujiwara, Kouji Kondou, Yoshikazu Teranishi, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir 4 (CO) 7 + ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar + ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10 -4 Pa. Furthermore, it was confirmed that Ir 4 (CO) 7 + ion beams significantly enhanced secondary ion intensity in high-mass region.

Original languageEnglish
Pages (from-to)916-921
Number of pages6
JournalApplied Surface Science
Issue number4
Publication statusPublished - 2008 Dec 15
Externally publishedYes


  • Cluster
  • Depth profiling
  • Ir (CO)
  • Metal cluster complex
  • SIMS
  • Sputtering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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