CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Hiroaki Yamazaki, Yoshihiko Kurui, Tomohiro Saito, Etsuji Ogawa, Kei Obara, Ryunosuke Gando, Daiki Ono, Tamio Ikehashi

Research output: Contribution to journalEditorial


In this paper, we report on a high-power handling RF-MEMS tunable capacitor that has a quadruple series capacitor (QSC) and a movable electrode using a slit with dielectric bridges (SDB) structure. The QSC structure consists of two fixed metal-insulator-metal (MIM) capacitors and two MEMS capacitor elements connected in series, and enables reduction of the RF voltage to the MEMS capacitors. The SDB structure is able to increase the release voltage without increasing the pull-in voltage. The combination of these structures enables improving power handling capabilities. A capacitor bank using QSC and SDB structures was fabricated by a micromachining process above CMOS control circuits. Measurement results demonstrate the excellent power handling capability up to +44 dBm for cold switching, and up to +35 dBm under hot switching. Moreover, the Q-factor of the capacitor bank is very high that is above 150 at 1 GHz, and the capacitance can be changed from 1.1 to 5.3 pF at a resolution of 4 bits by the internal control circuits thanks to monolithic integration.

Original languageEnglish
Article number1002B6
JournalJapanese journal of applied physics
Issue number10
Publication statusPublished - 2018 Oct 1
Externally publishedYes


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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