CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Hiroaki Yamazaki, Yoshihiko Kurui, Tomohiro Saito, Etsuji Ogawa, Kei Obara, Ryunosuke Gando, Daiki Ono, Tamio Ikehashi

Research output: Contribution to journalEditorial

Abstract

In this paper, we report on a high-power handling RF-MEMS tunable capacitor that has a quadruple series capacitor (QSC) and a movable electrode using a slit with dielectric bridges (SDB) structure. The QSC structure consists of two fixed metal-insulator-metal (MIM) capacitors and two MEMS capacitor elements connected in series, and enables reduction of the RF voltage to the MEMS capacitors. The SDB structure is able to increase the release voltage without increasing the pull-in voltage. The combination of these structures enables improving power handling capabilities. A capacitor bank using QSC and SDB structures was fabricated by a micromachining process above CMOS control circuits. Measurement results demonstrate the excellent power handling capability up to +44 dBm for cold switching, and up to +35 dBm under hot switching. Moreover, the Q-factor of the capacitor bank is very high that is above 150 at 1 GHz, and the capacitance can be changed from 1.1 to 5.3 pF at a resolution of 4 bits by the internal control circuits thanks to monolithic integration.

Original languageEnglish
Article number1002B6
JournalJapanese journal of applied physics
Volume57
Issue number10
DOIs
Publication statusPublished - 2018 Oct 1
Externally publishedYes

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bridges (structures)
microelectromechanical systems
MEMS
slits
CMOS
capacitors
Capacitors
Electric potential
electric potential
Networks (circuits)
Micromachining
micromachining
Metals
Chemical elements
metals
Q factors
Capacitance
capacitance
insulators
Electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure. / Yamazaki, Hiroaki; Kurui, Yoshihiko; Saito, Tomohiro; Ogawa, Etsuji; Obara, Kei; Gando, Ryunosuke; Ono, Daiki; Ikehashi, Tamio.

In: Japanese journal of applied physics, Vol. 57, No. 10, 1002B6, 01.10.2018.

Research output: Contribution to journalEditorial

Yamazaki, Hiroaki ; Kurui, Yoshihiko ; Saito, Tomohiro ; Ogawa, Etsuji ; Obara, Kei ; Gando, Ryunosuke ; Ono, Daiki ; Ikehashi, Tamio. / CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure. In: Japanese journal of applied physics. 2018 ; Vol. 57, No. 10.
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AU - Saito, Tomohiro

AU - Ogawa, Etsuji

AU - Obara, Kei

AU - Gando, Ryunosuke

AU - Ono, Daiki

AU - Ikehashi, Tamio

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