CMOS power amplifier with temperature compensation for 79 GHz radar system

Takeshi Yoshida, Kyoya Takano, Chenyang Li, Mizuki Motoyoshi, Kosuke Katayama, Shuhei Amakawa, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We have developed a 79 GHz CMOS power amplifier (PA) with temperature compensation implemented using 40 nm CMOS technology that suppresses the variation of small-signal gain and the degradation of linearity within 0.8 dB in the temperature range from 0 to 100°C. The PA consists of an on-chip temperature sensor and four-stage common-source NMOS amplifiers. The temperature-compensated PA operating at 100°C achieved a small-signal gain of 15.7 dB, a 12 GHz bandwidth and a saturated output power (Psat) of 6.8 dBm with 96.2 mW power consumption at a supply voltage of 1.1 V.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages239-241
Number of pages3
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul
Duration: 2013 Nov 52013 Nov 8

Other

Other2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CitySeoul
Period13/11/513/11/8

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Keywords

  • CMOS
  • millimeter-wave
  • power amplifier
  • temperature compensation
  • temperature sensor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yoshida, T., Takano, K., Li, C., Motoyoshi, M., Katayama, K., Amakawa, S., & Fujishima, M. (2013). CMOS power amplifier with temperature compensation for 79 GHz radar system. In 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013 (pp. 239-241). [6695106] https://doi.org/10.1109/APMC.2013.6695106