Coherent exciton-biexciton dynamics in GaN

K. Kyhm, R. A. Taylor, J. F. Ryan, Takao Aoki, M. Kuwata-Gonokami, B. Beaumont, P. Gibart

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Abstract

Spectrally resolved and time-integrated four-wave mixing are used to measure the polarization dependence of biexcitonic signals and quantum beats between two-(formula presented)-exciton (formula presented) and A-biexciton (formula presented) states in a high-quality GaN epilayer. Mixed beats with two periods are observed: the first beating period corresponds to the energy splitting between (formula presented) and (formula presented) the second period corresponds to beating between A excitons (formula presented) and donor bound excitons (formula presented) We also measure the polarization-dependent B-biexciton (formula presented) signal. The effective masses for the A and B holes are deduced from the binding energy.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number19
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kyhm, K., Taylor, R. A., Ryan, J. F., Aoki, T., Kuwata-Gonokami, M., Beaumont, B., & Gibart, P. (2002). Coherent exciton-biexciton dynamics in GaN. Physical Review B - Condensed Matter and Materials Physics, 65(19), 1-4. https://doi.org/10.1103/PhysRevB.65.193102