Coimplantation effects of (C and Si)/Ga in 6H-SiC

Y. Tanaka, Naoto Kobayashi, M. Hasegawa, M. Ogura, Y. Ishida, S. Yoshida, H. Okumura, H. Tanoue

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

We investigated the effect of coimplantation of gallium(Ga) with carbon(C) and silicon(Si) in 6H-SiC by using Rutherford backscattering spectrometry-channeling(RBS-C) and Hall effect measurement. In the case of coimplantation of Ga with C we could not find the enhancement of the activation raw of acceptors in contrast with the cases of coimplantation of Al/C and B/C. In the case of coimplantation of Ga with Si we found a drastic retrenchment of the activation rate compared with the case of coimplantation of Al/Si and B/Si. We concluded that this result originated in the difference in the site preference between Al, B and Ga.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Tanaka, Y., Kobayashi, N., Hasegawa, M., Ogura, M., Ishida, Y., Yoshida, S., Okumura, H., & Tanoue, H. (2000). Coimplantation effects of (C and Si)/Ga in 6H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.