Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.

Original languageEnglish
Pages (from-to)4820-4828
Number of pages9
JournalJournal of Physical Chemistry C
Volume113
Issue number12
DOIs
Publication statusPublished - 2009 Mar 26
Externally publishedYes

Fingerprint

Spectroscopic ellipsometry
Silver
ellipsometry
Raman spectroscopy
silver
Oxides
oxides
Substrates
Raman scattering
Raman spectra
Silicon
Light absorption
optical absorption
Damping
damping
Particle size
spacing
preparation
thresholds
silicon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films. / Oates, T. W H; Sugime, Hisashi; Noda, Suguru.

In: Journal of Physical Chemistry C, Vol. 113, No. 12, 26.03.2009, p. 4820-4828.

Research output: Contribution to journalArticle

@article{456cf4181a7b47ac910b97c42519f18c,
title = "Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films",
abstract = "Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.",
author = "Oates, {T. W H} and Hisashi Sugime and Suguru Noda",
year = "2009",
month = "3",
day = "26",
doi = "10.1021/jp8097654",
language = "English",
volume = "113",
pages = "4820--4828",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films

AU - Oates, T. W H

AU - Sugime, Hisashi

AU - Noda, Suguru

PY - 2009/3/26

Y1 - 2009/3/26

N2 - Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.

AB - Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.

UR - http://www.scopus.com/inward/record.url?scp=65249098966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249098966&partnerID=8YFLogxK

U2 - 10.1021/jp8097654

DO - 10.1021/jp8097654

M3 - Article

VL - 113

SP - 4820

EP - 4828

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 12

ER -