Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019cm-3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current-voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of -2×10-5A at room temperature.

Original languageEnglish
Pages (from-to)3841-3843
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number20
DOIs
Publication statusPublished - 2002 May 20
Externally publishedYes

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low resistance
bipolar transistors
heterojunctions
emitters
electric potential
vapor phase epitaxy
accumulators
nitrides
sapphire
transistors
saturation
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer. / Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 80, No. 20, 20.05.2002, p. 3841-3843.

Research output: Contribution to journalArticle

@article{2702c8beb57c47d9909e1a2d9632a325,
title = "Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer",
abstract = "We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019cm-3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current-voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of -2×10-5A at room temperature.",
author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",
year = "2002",
month = "5",
day = "20",
doi = "10.1063/1.1480102",
language = "English",
volume = "80",
pages = "3841--3843",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2002/5/20

Y1 - 2002/5/20

N2 - We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019cm-3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current-voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of -2×10-5A at room temperature.

AB - We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019cm-3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current-voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of -2×10-5A at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=79955990795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955990795&partnerID=8YFLogxK

U2 - 10.1063/1.1480102

DO - 10.1063/1.1480102

M3 - Article

VL - 80

SP - 3841

EP - 3843

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -