Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

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We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

Original languageEnglish
Pages (from-to)1225-1227
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2002 Feb 18


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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