Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

Original languageEnglish
Pages (from-to)1225-1227
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number7
DOIs
Publication statusPublished - 2002 Feb 18
Externally publishedYes

Fingerprint

junction transistors
bipolar transistors
emitters
electric potential
vapor phase epitaxy
accumulators
sapphire
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor. / Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 80, No. 7, 18.02.2002, p. 1225-1227.

Research output: Contribution to journalArticle

@article{4aa4b97ca047457e8d833bef28460d65,
title = "Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor",
abstract = "We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.",
author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",
year = "2002",
month = "2",
day = "18",
doi = "10.1063/1.1447593",
language = "English",
volume = "80",
pages = "1225--1227",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2002/2/18

Y1 - 2002/2/18

N2 - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

AB - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

UR - http://www.scopus.com/inward/record.url?scp=79956023983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956023983&partnerID=8YFLogxK

U2 - 10.1063/1.1447593

DO - 10.1063/1.1447593

M3 - Article

AN - SCOPUS:79956023983

VL - 80

SP - 1225

EP - 1227

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -