Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides

Koji Moriguchi, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Nobuhiro Okada

Research output: Contribution to journalArticle

Abstract

We report the results of the systematic investigation into correlations between energetics and hexagonal stacking configurations for carbon, silicon, SiC, BN, AlN, GaN, and InN polytypes with sp 3-bonded networks. The atomistic geometry, energetics, and electronic structure for these compounds with up to the periodic stacking length of L = 8 have been carefully calculated based on the density functional theory within the generalized gradient approximation (GGA). Using the Axial Next-Nearest-Neighbor Ising model extracted from the GGA calculations, we have also studied the energetics for more than 6 million kinds of nonequivalent stacking polytypes with up to L = 30, whose configurations have been deduced by the efficient polytype generation algorithm [E. Estevez-Rams and J. Martinez-Mojicar, Acta Crystallogr., Sect. A: Found. Crystallogr. 64, 529 (2008)], and illustrated some trends of structural and energetic properties for these compounds.

Original languageEnglish
Pages (from-to)7-16
Number of pages10
JournalJournal of Materials Research
Volume28
Issue number1
DOIs
Publication statusPublished - 2013 Jan 14
Externally publishedYes

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Ising model
Silicon
Nitrides
Electronic structure
Density functional theory
nitrides
Carbon
Semiconductor materials
gradients
Geometry
configurations
approximation
density functional theory
electronic structure
trends
carbon
silicon
geometry

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics

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Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides. / Moriguchi, Koji; Kamei, Kazuhito; Kusunoki, Kazuhiko; Yashiro, Nobuyoshi; Okada, Nobuhiro.

In: Journal of Materials Research, Vol. 28, No. 1, 14.01.2013, p. 7-16.

Research output: Contribution to journalArticle

Moriguchi, Koji ; Kamei, Kazuhito ; Kusunoki, Kazuhiko ; Yashiro, Nobuyoshi ; Okada, Nobuhiro. / Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides. In: Journal of Materials Research. 2013 ; Vol. 28, No. 1. pp. 7-16.
@article{a092a7d1b95a451cbe4e0cd45de3d673,
title = "Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides",
abstract = "We report the results of the systematic investigation into correlations between energetics and hexagonal stacking configurations for carbon, silicon, SiC, BN, AlN, GaN, and InN polytypes with sp 3-bonded networks. The atomistic geometry, energetics, and electronic structure for these compounds with up to the periodic stacking length of L = 8 have been carefully calculated based on the density functional theory within the generalized gradient approximation (GGA). Using the Axial Next-Nearest-Neighbor Ising model extracted from the GGA calculations, we have also studied the energetics for more than 6 million kinds of nonequivalent stacking polytypes with up to L = 30, whose configurations have been deduced by the efficient polytype generation algorithm [E. Estevez-Rams and J. Martinez-Mojicar, Acta Crystallogr., Sect. A: Found. Crystallogr. 64, 529 (2008)], and illustrated some trends of structural and energetic properties for these compounds.",
author = "Koji Moriguchi and Kazuhito Kamei and Kazuhiko Kusunoki and Nobuyoshi Yashiro and Nobuhiro Okada",
year = "2013",
month = "1",
day = "14",
doi = "10.1557/jmr.2012.206",
language = "English",
volume = "28",
pages = "7--16",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "1",

}

TY - JOUR

T1 - Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides

AU - Moriguchi, Koji

AU - Kamei, Kazuhito

AU - Kusunoki, Kazuhiko

AU - Yashiro, Nobuyoshi

AU - Okada, Nobuhiro

PY - 2013/1/14

Y1 - 2013/1/14

N2 - We report the results of the systematic investigation into correlations between energetics and hexagonal stacking configurations for carbon, silicon, SiC, BN, AlN, GaN, and InN polytypes with sp 3-bonded networks. The atomistic geometry, energetics, and electronic structure for these compounds with up to the periodic stacking length of L = 8 have been carefully calculated based on the density functional theory within the generalized gradient approximation (GGA). Using the Axial Next-Nearest-Neighbor Ising model extracted from the GGA calculations, we have also studied the energetics for more than 6 million kinds of nonequivalent stacking polytypes with up to L = 30, whose configurations have been deduced by the efficient polytype generation algorithm [E. Estevez-Rams and J. Martinez-Mojicar, Acta Crystallogr., Sect. A: Found. Crystallogr. 64, 529 (2008)], and illustrated some trends of structural and energetic properties for these compounds.

AB - We report the results of the systematic investigation into correlations between energetics and hexagonal stacking configurations for carbon, silicon, SiC, BN, AlN, GaN, and InN polytypes with sp 3-bonded networks. The atomistic geometry, energetics, and electronic structure for these compounds with up to the periodic stacking length of L = 8 have been carefully calculated based on the density functional theory within the generalized gradient approximation (GGA). Using the Axial Next-Nearest-Neighbor Ising model extracted from the GGA calculations, we have also studied the energetics for more than 6 million kinds of nonequivalent stacking polytypes with up to L = 30, whose configurations have been deduced by the efficient polytype generation algorithm [E. Estevez-Rams and J. Martinez-Mojicar, Acta Crystallogr., Sect. A: Found. Crystallogr. 64, 529 (2008)], and illustrated some trends of structural and energetic properties for these compounds.

UR - http://www.scopus.com/inward/record.url?scp=84872338822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872338822&partnerID=8YFLogxK

U2 - 10.1557/jmr.2012.206

DO - 10.1557/jmr.2012.206

M3 - Article

VL - 28

SP - 7

EP - 16

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 1

ER -