Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods

T. Murakami, K. Nakamura, S. Yamashita, S. Takeuchi, M. Murakawa, H. Kawarada

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Intensive and dominant free-exciton (FE) recombination radiation is observed from chamber flame (CF) diamonds, and high pressure and high temperature (HP/HT) diamonds. The FE recombination radiation associated with one TO phonon (FETO) intensity from CF and HP/HT diamonds increases as temperature decreases from room temperature until 120 and 110 K, respectively, and saturates below these temperatures which are 30-50 K lower than the temperature at which the FETO intensity from microwave plasma chemical vapor deposition (MPCVD) diamond saturates. The crystallinity of CF, HP/HT and MPCVD diamonds is discussed by the saturation temperature depending on the non-radiative transition probability caused by intrinsic dissociation of FE. Increase of the FETO intensity is observed from an oxygen-terminated surface. The FETO intensity from oxygen-terminated surface of CF isolated particle is about three times larger than that from hydrogen-terminated surface. The change of the FETO intensity is explained by the difference in the surface electronic structure and/or the surface band bending between the oxygen-and hydrogen-terminated surfaces.

Original languageEnglish
Pages (from-to)1668-1673
Number of pages6
JournalDiamond and Related Materials
Volume6
Issue number11
DOIs
Publication statusPublished - 1997 Oct

Keywords

  • Chamber flame method
  • Free exciton recombination radiation
  • High pressure and high temperature method
  • Negative-electron-affinity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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