Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum

Mirko Weidner, Junjun Jia, Yuzo Shigesato, Andreas Klein

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

SnO2 films doped with antimony or tantalum were sputter-deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4×10-4 Ωcm, carrier density 4.5×1020 cm-3, and mobility 25.7cm2Vs-1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter-deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.

Original languageEnglish
Pages (from-to)923-928
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume253
Issue number5
DOIs
Publication statusPublished - 2016 May 1
Externally publishedYes

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Keywords

  • Antimony
  • Doping
  • Films
  • Resistivity
  • SnO
  • Sputter deposition
  • Tantalum
  • Transparent conducting oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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