Abstract
SnO2 films doped with antimony or tantalum were sputter-deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4×10-4 Ωcm, carrier density 4.5×1020 cm-3, and mobility 25.7cm2Vs-1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter-deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 923-928 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 253 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2016 May 1 |
| Externally published | Yes |
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Keywords
- Antimony
- Doping
- Films
- Resistivity
- SnO
- Sputter deposition
- Tantalum
- Transparent conducting oxides
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum. / Weidner, Mirko; Jia, Junjun; Shigesato, Yuzo; Klein, Andreas.
In: Physica Status Solidi (B) Basic Research, Vol. 253, No. 5, 01.05.2016, p. 923-928.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum
AU - Weidner, Mirko
AU - Jia, Junjun
AU - Shigesato, Yuzo
AU - Klein, Andreas
PY - 2016/5/1
Y1 - 2016/5/1
N2 - SnO2 films doped with antimony or tantalum were sputter-deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4×10-4 Ωcm, carrier density 4.5×1020 cm-3, and mobility 25.7cm2Vs-1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter-deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.
AB - SnO2 films doped with antimony or tantalum were sputter-deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4×10-4 Ωcm, carrier density 4.5×1020 cm-3, and mobility 25.7cm2Vs-1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter-deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.
KW - Antimony
KW - Doping
KW - Films
KW - Resistivity
KW - SnO
KW - Sputter deposition
KW - Tantalum
KW - Transparent conducting oxides
UR - http://www.scopus.com/inward/record.url?scp=84958012374&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958012374&partnerID=8YFLogxK
U2 - 10.1002/pssb.201552720
DO - 10.1002/pssb.201552720
M3 - Article
AN - SCOPUS:84958012374
VL - 253
SP - 923
EP - 928
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 5
ER -