Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation

Takahiro Homma, Kei Hasegawa, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigate the ability of the nano-scale III-V MOSFETs with InGaAs, GaAs or InP channels by using the quantum-corrected Monte Carlo (MC) simulation. The InGaAs channel shows the largest average electron velocity at the bottleneck, v s, because of the smallest electron effective mass, m * in the Γ valley. However, it is degraded by the electron rebound from the drain through the accumulation in the L valleys, when the gate voltage, V gs, is highly biased. The electron rebound is more pronounced in the GaAs channel, because of the narrow Γ - L valley separation. Meanwhile, the InP channel shows the smallest v s because of the largest m * in the Γ valley. However, the electron rebound is less pronounced, because of the smaller accumulation in the L valleys. On the other hand, the electron density at the potential bottleneck, n b, is largest in the InP channel, because of the largest gate capacitance owing to the highest density of states, DOS. Eventually, the InP channel shows the largest drain current, I ds.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number2
DOIs
Publication statusPublished - 2012 Feb
Externally publishedYes

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Keywords

  • GaAs
  • III-V MOSFET
  • InGaAs
  • InP
  • Quantum-corrected Monte Carlo simulation
  • Quasi-ballistic transport

ASJC Scopus subject areas

  • Condensed Matter Physics

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