Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii, Toshiro Hiramoto

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The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

Original languageEnglish
Article number04EC18
JournalJapanese Journal of Applied Physics
Issue number4 SPEC. ISSUE
Publication statusPublished - 2014
Externally publishedYes


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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