Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii, Toshiro Hiramoto

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

Original languageEnglish
Article number04EC18
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014
Externally publishedYes

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random access memory
Data storage equipment
Silicon
Oxides
oxides
Electric potential
electric potential
silicon
cells
low voltage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells. / Mizutani, Tomoko; Yamamoto, Yoshiki; Makiyama, Hideki; Shinohara, Hirofumi; Iwamatsu, Toshiaki; Oda, Hidekazu; Sugii, Nobuyuki; Hiramoto, Toshiro.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EC18, 2014.

Research output: Contribution to journalArticle

Mizutani, Tomoko ; Yamamoto, Yoshiki ; Makiyama, Hideki ; Shinohara, Hirofumi ; Iwamatsu, Toshiaki ; Oda, Hidekazu ; Sugii, Nobuyuki ; Hiramoto, Toshiro. / Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 4 SPEC. ISSUE.
@article{ea3c5e2bb1c84473b86d4ba62128ce9a,
title = "Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells",
abstract = "The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.",
author = "Tomoko Mizutani and Yoshiki Yamamoto and Hideki Makiyama and Hirofumi Shinohara and Toshiaki Iwamatsu and Hidekazu Oda and Nobuyuki Sugii and Toshiro Hiramoto",
year = "2014",
doi = "10.7567/JJAP.53.04EC18",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 SPEC. ISSUE",

}

TY - JOUR

T1 - Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

AU - Mizutani, Tomoko

AU - Yamamoto, Yoshiki

AU - Makiyama, Hideki

AU - Shinohara, Hirofumi

AU - Iwamatsu, Toshiaki

AU - Oda, Hidekazu

AU - Sugii, Nobuyuki

AU - Hiramoto, Toshiro

PY - 2014

Y1 - 2014

N2 - The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

AB - The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

UR - http://www.scopus.com/inward/record.url?scp=84903278212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903278212&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.04EC18

DO - 10.7567/JJAP.53.04EC18

M3 - Article

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 SPEC. ISSUE

M1 - 04EC18

ER -