Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells

Xianfeng Zhang, Masakazu Kobayashi, Akira Yamada

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.

    Original languageEnglish
    Pages (from-to)16215-16220
    Number of pages6
    JournalACS Applied Materials and Interfaces
    Volume9
    Issue number19
    DOIs
    Publication statusPublished - 2017 May 17

    Fingerprint

    Ohmic contacts
    Schematic diagrams
    Structural properties
    Solar cells
    Electric properties
    X ray diffraction
    X-Ray Emission Spectrometry

    Keywords

    • conversion efficiency
    • interface
    • ohmic contact
    • Schottky contact
    • solar cell

    ASJC Scopus subject areas

    • Materials Science(all)

    Cite this

    Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells. / Zhang, Xianfeng; Kobayashi, Masakazu; Yamada, Akira.

    In: ACS Applied Materials and Interfaces, Vol. 9, No. 19, 17.05.2017, p. 16215-16220.

    Research output: Contribution to journalArticle

    @article{7ab999a4d7df4a3b8b6e3ff3ad471a69,
    title = "Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells",
    abstract = "The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 {\AA}. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.",
    keywords = "conversion efficiency, interface, ohmic contact, Schottky contact, solar cell",
    author = "Xianfeng Zhang and Masakazu Kobayashi and Akira Yamada",
    year = "2017",
    month = "5",
    day = "17",
    doi = "10.1021/acsami.7b02548",
    language = "English",
    volume = "9",
    pages = "16215--16220",
    journal = "ACS applied materials & interfaces",
    issn = "1944-8244",
    publisher = "American Chemical Society",
    number = "19",

    }

    TY - JOUR

    T1 - Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells

    AU - Zhang, Xianfeng

    AU - Kobayashi, Masakazu

    AU - Yamada, Akira

    PY - 2017/5/17

    Y1 - 2017/5/17

    N2 - The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.

    AB - The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.

    KW - conversion efficiency

    KW - interface

    KW - ohmic contact

    KW - Schottky contact

    KW - solar cell

    UR - http://www.scopus.com/inward/record.url?scp=85019540156&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85019540156&partnerID=8YFLogxK

    U2 - 10.1021/acsami.7b02548

    DO - 10.1021/acsami.7b02548

    M3 - Article

    AN - SCOPUS:85019540156

    VL - 9

    SP - 16215

    EP - 16220

    JO - ACS applied materials & interfaces

    JF - ACS applied materials & interfaces

    SN - 1944-8244

    IS - 19

    ER -