Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells

Xianfeng Zhang, Masakazu Kobayashi, Akira Yamada

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    10 Citations (Scopus)

    Abstract

    The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.

    Original languageEnglish
    Pages (from-to)16215-16220
    Number of pages6
    JournalACS Applied Materials and Interfaces
    Volume9
    Issue number19
    DOIs
    Publication statusPublished - 2017 May 17

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    Keywords

    • conversion efficiency
    • interface
    • ohmic contact
    • Schottky contact
    • solar cell

    ASJC Scopus subject areas

    • Materials Science(all)

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