Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultrathin Al2O3/Si3N 4 bilayer and Si3N4 single layer

Chengxin Wang*, Narihiko Maeda, Masanobu Hiroki, Takehiko Tawara, Toshiki Makimoto, Takashi Kobayashi, Takotomo Enoki

*Corresponding author for this work

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