Comparison of high-purity-ozone oxidation on Si(111) and Si(100)

A. Kurokawa, Shingo Ichimura, D. W. Moon

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

The oxidation of Si(111) and Si(100) surfaces with the high-purity ozone (more than 98 mole %) was investigated with X-ray photoelectron spectroscopy (XPS). Thin oxide less than 3 nm thickens was formed in an experimental chamber and the results showed that ozone oxidizes the (111) surface faster than (100) surface. Ozone does not show the temperature dependence on oxidation within the temperature range of 250-500 degree C for both (111) and (100) surfaces. Ozone proceeds the oxide formation at 700 degree C where oxygen does not proceed oxide formation rapidly.

Original languageEnglish
Pages (from-to)359-364
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume477
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1997 Mar 311997 Apr 3

Fingerprint

Ozone
ozone
purity
Oxides
Oxidation
oxidation
oxides
X ray photoelectron spectroscopy
chambers
photoelectron spectroscopy
Oxygen
Temperature
temperature dependence
oxygen
x rays
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Comparison of high-purity-ozone oxidation on Si(111) and Si(100). / Kurokawa, A.; Ichimura, Shingo; Moon, D. W.

In: Materials Research Society Symposium - Proceedings, Vol. 477, 01.01.1997, p. 359-364.

Research output: Contribution to journalConference article

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