Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

T. Fujita, T. Toizumi, Y. Nakazato, Atsushi Tackeuchi, T. Chinone, J. H. Liang, M. Kajikawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field.

    Original languageEnglish
    Pages (from-to)356-359
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 2008

    Fingerprint

    Stark effect
    screening
    quantum wells
    photoluminescence
    decay
    ultraviolet radiation
    light emitting diodes
    electric fields
    energy
    shift
    lasers

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells. / Fujita, T.; Toizumi, T.; Nakazato, Y.; Tackeuchi, Atsushi; Chinone, T.; Liang, J. H.; Kajikawa, M.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 2008, p. 356-359.

    Research output: Contribution to journalArticle

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    AU - Fujita, T.

    AU - Toizumi, T.

    AU - Nakazato, Y.

    AU - Tackeuchi, Atsushi

    AU - Chinone, T.

    AU - Liang, J. H.

    AU - Kajikawa, M.

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