Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi, T. Chinone, J. H. Liang, M. Kajikawa

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field.

Original languageEnglish
Pages (from-to)356-359
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number1
DOIs
Publication statusPublished - 2008 Jun 30
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: 2007 Jul 232007 Jul 27

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ASJC Scopus subject areas

  • Condensed Matter Physics

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