Completely quantum-mechanical extraction of equivalent oxide thickness of PMOS gate insulator

Atsushi Hiraiwa, Akio Shima, Dai Ishikawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantummechanical (QM) capacitancevoltage ( C-V) simulator of polycrystalline-Si-gate p-channel metaloxidesemiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did not adopt any assumptions, which were inevitable in the other simulators, to implement the QM effects. Experimental C-V curves were almost completely reproduced by the simulator. The authors further extracted the equivalent oxide thicknesses (EOTs) of NMOS and PMOS devices, which were formed on the same dies, using this and the previous simulators. The EOTs of PMOS devices were always equal to or larger than those of the NMOS devices. The difference increased with a total dosage of fluorine atoms that were selectively introduced into the PMOS devices by BF2+ or F+ implantations during fabrication steps. It was almost zero in the case of small F dosages, as it should be. These results support the validity of this simulator. During the development of the simulator, the authors again confirmed that the relative dielectric constant of SiO2, grown at 950 °C or lower, is larger than the conventional value of 3.9.

Original languageEnglish
Article number5677479
Pages (from-to)650-657
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number3
DOIs
Publication statusPublished - 2011 Mar
Externally publishedYes

Fingerprint

Oxides
Simulators
MOS devices
Fluorine
Permittivity
Fabrication
Atoms

Keywords

  • Accumulation
  • C-V curve
  • equivalent oxide thickness (EOT)
  • gate insulator
  • p-channel metaloxidesemiconductor (PMOS)
  • physical thickness
  • quantum effect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Completely quantum-mechanical extraction of equivalent oxide thickness of PMOS gate insulator. / Hiraiwa, Atsushi; Shima, Akio; Ishikawa, Dai.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 3, 5677479, 03.2011, p. 650-657.

Research output: Contribution to journalArticle

Hiraiwa, Atsushi ; Shima, Akio ; Ishikawa, Dai. / Completely quantum-mechanical extraction of equivalent oxide thickness of PMOS gate insulator. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 3. pp. 650-657.
@article{c828ed8f3ff142b9b65c075ce54c16e2,
title = "Completely quantum-mechanical extraction of equivalent oxide thickness of PMOS gate insulator",
abstract = "To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantummechanical (QM) capacitancevoltage ( C-V) simulator of polycrystalline-Si-gate p-channel metaloxidesemiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did not adopt any assumptions, which were inevitable in the other simulators, to implement the QM effects. Experimental C-V curves were almost completely reproduced by the simulator. The authors further extracted the equivalent oxide thicknesses (EOTs) of NMOS and PMOS devices, which were formed on the same dies, using this and the previous simulators. The EOTs of PMOS devices were always equal to or larger than those of the NMOS devices. The difference increased with a total dosage of fluorine atoms that were selectively introduced into the PMOS devices by BF2+ or F+ implantations during fabrication steps. It was almost zero in the case of small F dosages, as it should be. These results support the validity of this simulator. During the development of the simulator, the authors again confirmed that the relative dielectric constant of SiO2, grown at 950 °C or lower, is larger than the conventional value of 3.9.",
keywords = "Accumulation, C-V curve, equivalent oxide thickness (EOT), gate insulator, p-channel metaloxidesemiconductor (PMOS), physical thickness, quantum effect",
author = "Atsushi Hiraiwa and Akio Shima and Dai Ishikawa",
year = "2011",
month = "3",
doi = "10.1109/TED.2010.2098479",
language = "English",
volume = "58",
pages = "650--657",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Completely quantum-mechanical extraction of equivalent oxide thickness of PMOS gate insulator

AU - Hiraiwa, Atsushi

AU - Shima, Akio

AU - Ishikawa, Dai

PY - 2011/3

Y1 - 2011/3

N2 - To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantummechanical (QM) capacitancevoltage ( C-V) simulator of polycrystalline-Si-gate p-channel metaloxidesemiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did not adopt any assumptions, which were inevitable in the other simulators, to implement the QM effects. Experimental C-V curves were almost completely reproduced by the simulator. The authors further extracted the equivalent oxide thicknesses (EOTs) of NMOS and PMOS devices, which were formed on the same dies, using this and the previous simulators. The EOTs of PMOS devices were always equal to or larger than those of the NMOS devices. The difference increased with a total dosage of fluorine atoms that were selectively introduced into the PMOS devices by BF2+ or F+ implantations during fabrication steps. It was almost zero in the case of small F dosages, as it should be. These results support the validity of this simulator. During the development of the simulator, the authors again confirmed that the relative dielectric constant of SiO2, grown at 950 °C or lower, is larger than the conventional value of 3.9.

AB - To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantummechanical (QM) capacitancevoltage ( C-V) simulator of polycrystalline-Si-gate p-channel metaloxidesemiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did not adopt any assumptions, which were inevitable in the other simulators, to implement the QM effects. Experimental C-V curves were almost completely reproduced by the simulator. The authors further extracted the equivalent oxide thicknesses (EOTs) of NMOS and PMOS devices, which were formed on the same dies, using this and the previous simulators. The EOTs of PMOS devices were always equal to or larger than those of the NMOS devices. The difference increased with a total dosage of fluorine atoms that were selectively introduced into the PMOS devices by BF2+ or F+ implantations during fabrication steps. It was almost zero in the case of small F dosages, as it should be. These results support the validity of this simulator. During the development of the simulator, the authors again confirmed that the relative dielectric constant of SiO2, grown at 950 °C or lower, is larger than the conventional value of 3.9.

KW - Accumulation

KW - C-V curve

KW - equivalent oxide thickness (EOT)

KW - gate insulator

KW - p-channel metaloxidesemiconductor (PMOS)

KW - physical thickness

KW - quantum effect

UR - http://www.scopus.com/inward/record.url?scp=79952043192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952043192&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2098479

DO - 10.1109/TED.2010.2098479

M3 - Article

AN - SCOPUS:79952043192

VL - 58

SP - 650

EP - 657

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

M1 - 5677479

ER -