Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior

Cedric Mannequin, Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The resistive switching behavior of Cu/Ta2O5/Pt atomic switches, in which the Ta2O5 film was deposited by electron-beam (EB) evaporation and radio-frequency sputtering (SP), was investigated under different relative humidity (RH) levels. Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy measurements revealed that both films possess the oxygen-rich composition and higher water absorption capability of EB films. The Cu/Ta2O5-SP/Pt cell showed a stable, nonvolatile switching behavior in the observed RH range, whereas the Cu/Ta2O5-EB/Pt cell exhibited a similar behavior up to 50% RH, but altered from nonvolatile to volatile switching at higher RH levels. The observed volatile switching behavior of the Cu/Ta2O5-EB/Pt cell can be explained by increased ion migration, assisted by absorbed water and/or proton conduction in hydrated environments. The results indicate that the water uptake ability of the matrix film plays a crucial role in determining the resistive switching behavior of oxide-based atomic switches.

    Original languageEnglish
    Article number06GG08
    JournalJapanese Journal of Applied Physics
    Volume55
    Issue number6
    DOIs
    Publication statusPublished - 2016 Jun 1

    Fingerprint

    humidity
    Atmospheric humidity
    Electron beams
    Thin films
    electron beams
    thin films
    Chemical analysis
    Sputtering
    switches
    sputtering
    cells
    Switches
    water
    Water absorption
    Water
    Infrared spectroscopy
    radio frequencies
    Protons
    Evaporation
    X ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior. / Mannequin, Cedric; Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Aono, Masakazu.

    In: Japanese Journal of Applied Physics, Vol. 55, No. 6, 06GG08, 01.06.2016.

    Research output: Contribution to journalArticle

    @article{1d87ab0a50694ef4acd5ab075d0745dc,
    title = "Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior",
    abstract = "The resistive switching behavior of Cu/Ta2O5/Pt atomic switches, in which the Ta2O5 film was deposited by electron-beam (EB) evaporation and radio-frequency sputtering (SP), was investigated under different relative humidity (RH) levels. Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy measurements revealed that both films possess the oxygen-rich composition and higher water absorption capability of EB films. The Cu/Ta2O5-SP/Pt cell showed a stable, nonvolatile switching behavior in the observed RH range, whereas the Cu/Ta2O5-EB/Pt cell exhibited a similar behavior up to 50{\%} RH, but altered from nonvolatile to volatile switching at higher RH levels. The observed volatile switching behavior of the Cu/Ta2O5-EB/Pt cell can be explained by increased ion migration, assisted by absorbed water and/or proton conduction in hydrated environments. The results indicate that the water uptake ability of the matrix film plays a crucial role in determining the resistive switching behavior of oxide-based atomic switches.",
    author = "Cedric Mannequin and Tohru Tsuruoka and Tsuyoshi Hasegawa and Masakazu Aono",
    year = "2016",
    month = "6",
    day = "1",
    doi = "10.7567/JJAP.55.06GG08",
    language = "English",
    volume = "55",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "6",

    }

    TY - JOUR

    T1 - Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior

    AU - Mannequin, Cedric

    AU - Tsuruoka, Tohru

    AU - Hasegawa, Tsuyoshi

    AU - Aono, Masakazu

    PY - 2016/6/1

    Y1 - 2016/6/1

    N2 - The resistive switching behavior of Cu/Ta2O5/Pt atomic switches, in which the Ta2O5 film was deposited by electron-beam (EB) evaporation and radio-frequency sputtering (SP), was investigated under different relative humidity (RH) levels. Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy measurements revealed that both films possess the oxygen-rich composition and higher water absorption capability of EB films. The Cu/Ta2O5-SP/Pt cell showed a stable, nonvolatile switching behavior in the observed RH range, whereas the Cu/Ta2O5-EB/Pt cell exhibited a similar behavior up to 50% RH, but altered from nonvolatile to volatile switching at higher RH levels. The observed volatile switching behavior of the Cu/Ta2O5-EB/Pt cell can be explained by increased ion migration, assisted by absorbed water and/or proton conduction in hydrated environments. The results indicate that the water uptake ability of the matrix film plays a crucial role in determining the resistive switching behavior of oxide-based atomic switches.

    AB - The resistive switching behavior of Cu/Ta2O5/Pt atomic switches, in which the Ta2O5 film was deposited by electron-beam (EB) evaporation and radio-frequency sputtering (SP), was investigated under different relative humidity (RH) levels. Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy measurements revealed that both films possess the oxygen-rich composition and higher water absorption capability of EB films. The Cu/Ta2O5-SP/Pt cell showed a stable, nonvolatile switching behavior in the observed RH range, whereas the Cu/Ta2O5-EB/Pt cell exhibited a similar behavior up to 50% RH, but altered from nonvolatile to volatile switching at higher RH levels. The observed volatile switching behavior of the Cu/Ta2O5-EB/Pt cell can be explained by increased ion migration, assisted by absorbed water and/or proton conduction in hydrated environments. The results indicate that the water uptake ability of the matrix film plays a crucial role in determining the resistive switching behavior of oxide-based atomic switches.

    UR - http://www.scopus.com/inward/record.url?scp=84974528601&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84974528601&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.55.06GG08

    DO - 10.7567/JJAP.55.06GG08

    M3 - Article

    AN - SCOPUS:84974528601

    VL - 55

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 6

    M1 - 06GG08

    ER -