Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

A. Hiraiwa, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages617-618
Number of pages2
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA
Duration: 2006 Mar 262006 Mar 30

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CitySan Jose, CA
Period06/3/2606/3/30

Fingerprint

Oxides

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hiraiwa, A., & Ishikawa, D. (2006). Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. In IEEE International Reliability Physics Symposium Proceedings (pp. 617-618). [4017231] https://doi.org/10.1109/RELPHY.2006.251290

Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. / Hiraiwa, A.; Ishikawa, D.

IEEE International Reliability Physics Symposium Proceedings. 2006. p. 617-618 4017231.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hiraiwa, A & Ishikawa, D 2006, Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. in IEEE International Reliability Physics Symposium Proceedings., 4017231, pp. 617-618, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, 06/3/26. https://doi.org/10.1109/RELPHY.2006.251290
Hiraiwa A, Ishikawa D. Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. In IEEE International Reliability Physics Symposium Proceedings. 2006. p. 617-618. 4017231 https://doi.org/10.1109/RELPHY.2006.251290
Hiraiwa, A. ; Ishikawa, D. / Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. IEEE International Reliability Physics Symposium Proceedings. 2006. pp. 617-618
@inproceedings{a8ff9992a7b149a1b9d4dc9867340ad5,
title = "Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides",
author = "A. Hiraiwa and D. Ishikawa",
year = "2006",
doi = "10.1109/RELPHY.2006.251290",
language = "English",
isbn = "0780394992",
pages = "617--618",
booktitle = "IEEE International Reliability Physics Symposium Proceedings",

}

TY - GEN

T1 - Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

AU - Hiraiwa, A.

AU - Ishikawa, D.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=34250724895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250724895&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2006.251290

DO - 10.1109/RELPHY.2006.251290

M3 - Conference contribution

SN - 0780394992

SN - 0780394984

SN - 9780780394988

SP - 617

EP - 618

BT - IEEE International Reliability Physics Symposium Proceedings

ER -