Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

A. Hiraiwa, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages617-618
Number of pages2
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA
Duration: 2006 Mar 262006 Mar 30

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CitySan Jose, CA
Period06/3/2606/3/30

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hiraiwa, A., & Ishikawa, D. (2006). Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides. In IEEE International Reliability Physics Symposium Proceedings (pp. 617-618). [4017231] https://doi.org/10.1109/RELPHY.2006.251290