Computational examination of the electrophilic reaction on oxidative polymerization of phenyltrimethylsilane with sulfur chloride

E. Shouji, K. Yamamoto, J. Katoh, Hiroyuki Nishide, E. Tsuchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Phenyltrimethylsilane possesses a higher HOMO energy (–9.34 eV) than nonsubstituted benzene (>0.41 eV). The π electron of the phenyltrimethylsilane localizes on the benzene ring at the ipso position rather than at the para position. Two center energies calculated by the MNDO‐PM3 method indicate that the CSi bond is facilitated to cleave in comparison with the CH (para position) one of the benzene ring. Phenyltrimethylsilane and phenyl bis(trimethylsilane) were polymerized with sulfur chloride through the cationic oxidative polymerization. The product is isolated as oligo(p‐phenylene sulfide), with a melting point of 150–190°C. An electrophile attacks the carbon atom linked to the Si atom in phenyltrimethylsilane. The new synthetic route of PPS can be established on the basis of the computational calculation.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalPolymers for Advanced Technologies
Volume4
Issue number1
DOIs
Publication statusPublished - 1993

Fingerprint

Benzene
Sulfur
Polymerization
Atoms
Sulfides
Melting point
Carbon
Electrons
sulfur monochloride

Keywords

  • Cationic oxidative polymerization
  • HOMO
  • MNDO‐PM3
  • Phenyltrimethylsilane
  • Poly(phenylene sulfide)
  • Sulfur chloride

ASJC Scopus subject areas

  • Polymers and Plastics

Cite this

Computational examination of the electrophilic reaction on oxidative polymerization of phenyltrimethylsilane with sulfur chloride. / Shouji, E.; Yamamoto, K.; Katoh, J.; Nishide, Hiroyuki; Tsuchida, E.

In: Polymers for Advanced Technologies, Vol. 4, No. 1, 1993, p. 12-16.

Research output: Contribution to journalArticle

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AU - Nishide, Hiroyuki

AU - Tsuchida, E.

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N2 - Phenyltrimethylsilane possesses a higher HOMO energy (–9.34 eV) than nonsubstituted benzene (>0.41 eV). The π electron of the phenyltrimethylsilane localizes on the benzene ring at the ipso position rather than at the para position. Two center energies calculated by the MNDO‐PM3 method indicate that the CSi bond is facilitated to cleave in comparison with the CH (para position) one of the benzene ring. Phenyltrimethylsilane and phenyl bis(trimethylsilane) were polymerized with sulfur chloride through the cationic oxidative polymerization. The product is isolated as oligo(p‐phenylene sulfide), with a melting point of 150–190°C. An electrophile attacks the carbon atom linked to the Si atom in phenyltrimethylsilane. The new synthetic route of PPS can be established on the basis of the computational calculation.

AB - Phenyltrimethylsilane possesses a higher HOMO energy (–9.34 eV) than nonsubstituted benzene (>0.41 eV). The π electron of the phenyltrimethylsilane localizes on the benzene ring at the ipso position rather than at the para position. Two center energies calculated by the MNDO‐PM3 method indicate that the CSi bond is facilitated to cleave in comparison with the CH (para position) one of the benzene ring. Phenyltrimethylsilane and phenyl bis(trimethylsilane) were polymerized with sulfur chloride through the cationic oxidative polymerization. The product is isolated as oligo(p‐phenylene sulfide), with a melting point of 150–190°C. An electrophile attacks the carbon atom linked to the Si atom in phenyltrimethylsilane. The new synthetic route of PPS can be established on the basis of the computational calculation.

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