Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metalinsulatormetal (MIM) structure using a thin Ta 2O 5 layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic point contact of different integer multiples in the Ta 2O 5 layer. The results demonstrate that atomic point contacts can be realized in an oxide-based MIM structure that functions as a nanogap-based atomic switch (Terabe etal 2005 Nature 433 47). By applying consecutive voltage pulses at periodic intervals of different times, we also observed an effect analogous to the long-term potentiation of biological synapses, which shows that the oxide-based atomic switch has potential for use as an essential building block of neural computing systems.

Original languageEnglish
Article number435705
JournalNanotechnology
Volume23
Issue number43
DOIs
Publication statusPublished - 2012 Nov 2
Externally publishedYes

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Point contacts
Oxides
Switches
Cations
Dissolution
Positive ions
Metals
Data storage equipment
Electric potential

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch. / Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Terabe, Kazuya; Aono, Masakazu.

In: Nanotechnology, Vol. 23, No. 43, 435705, 02.11.2012.

Research output: Contribution to journalArticle

Tsuruoka, Tohru ; Hasegawa, Tsuyoshi ; Terabe, Kazuya ; Aono, Masakazu. / Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch. In: Nanotechnology. 2012 ; Vol. 23, No. 43.
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