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Conduction Properties of Chemically Deposited Polycrystalline Silicon
T. Yoshihara, A. Yasuoka, H. Abe
Research output
:
Contribution to journal
›
Article
›
peer-review
10
Citations (Scopus)
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Dive into the research topics of 'Conduction Properties of Chemically Deposited Polycrystalline Silicon'. Together they form a unique fingerprint.
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Physics & Astronomy
trapping
66%
conduction
57%
silicon
46%
silicon films
46%
heat treatment
34%
phosphorus
21%
ion implantation
19%
boron
18%
grain boundaries
16%
dosage
14%
impurities
14%
oxygen
13%
temperature
12%
Engineering & Materials Science
Polysilicon
100%
Doping (additives)
32%
Heat treatment
25%
Ion implantation
19%
Phosphorus
17%
Temperature
17%
Boron
16%
Grain boundaries
14%
Impurities
13%
Oxygen
11%
Chemical Compounds
Polycrystalline Solid
77%
Heat Treatment
24%
Liquid Film
20%
Potential Barrier
18%
Ion Implantation
17%
Grain Boundary
14%
Dose
11%
Dioxygen
7%
Amount
6%