TY - JOUR
T1 - Conductivity and field effect transistor of La2@C80 metallofullerene
AU - Kobayashi, Shin ichiro
AU - Mori, Satoshi
AU - Iida, Satoru
AU - Ando, Hiroaki
AU - Takenobu, Taishi
AU - Taguchi, Yasujiro
AU - Fujiwara, Akihiko
AU - Taninaka, Atsushi
AU - Shinohara, Hisanori
AU - Iwasa, Yoshihiro
PY - 2003/7/9
Y1 - 2003/7/9
N2 - We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 × 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.
AB - We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 × 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.
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U2 - 10.1021/ja034944a
DO - 10.1021/ja034944a
M3 - Article
C2 - 12837077
AN - SCOPUS:0038344162
SN - 0002-7863
VL - 125
SP - 8116
EP - 8117
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 27
ER -