Conductivity and field effect transistor of La2@C80 metallofullerene

Shin ichiro Kobayashi, Satoshi Mori, Satoru Iida, Hiroaki Ando, Taishi Takenobu, Yasujiro Taguchi, Akihiko Fujiwara, Atsushi Taninaka, Hisanori Shinohara, Yoshihiro Iwasa

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106 Citations (Scopus)

Abstract

We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 × 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.

Original languageEnglish
Pages (from-to)8116-8117
Number of pages2
JournalJournal of the American Chemical Society
Volume125
Issue number27
DOIs
Publication statusPublished - 2003 Jul 9
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)

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    Kobayashi, S. I., Mori, S., Iida, S., Ando, H., Takenobu, T., Taguchi, Y., Fujiwara, A., Taninaka, A., Shinohara, H., & Iwasa, Y. (2003). Conductivity and field effect transistor of La2@C80 metallofullerene. Journal of the American Chemical Society, 125(27), 8116-8117. https://doi.org/10.1021/ja034944a