Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Suguru Noda, Yuya Kajikawa, Hiroshi Komiyama

Research output: Contribution to journalArticle

Abstract

The cone structure formation in epitaxial Si films produced by chemical vapor deposition (CVD) was reported. Measures to prevent cone formation were proposed by studying the cause of the different growth rates between the cone and the film. The shape of the cone was analyzed to precisely determine the growth rate of each crystallographic plane.

Original languageEnglish
Pages (from-to)87-89
Number of pages3
JournalAdvanced Materials
Volume14
Issue number9
Publication statusPublished - 2002 May 3
Externally publishedYes

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Silicon
Cones
Vapors
Chemical vapor deposition

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films. / Noda, Suguru; Kajikawa, Yuya; Komiyama, Hiroshi.

In: Advanced Materials, Vol. 14, No. 9, 03.05.2002, p. 87-89.

Research output: Contribution to journalArticle

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