Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Suguru Noda, Yuya Kajikawa, Hiroshi Komiyama

Research output: Contribution to journalArticle

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)87-89
Number of pages3
JournalChemical Vapor Deposition
Volume8
Issue number3
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

Fingerprint

Diamond
Crystallography
Silicon
silicon films
Epitaxial growth
X ray diffraction analysis
crystallography
Cones
Chemical vapor deposition
Diamonds
cones
Nucleation
diamonds
Vapors
vapor deposition
nucleation
vapors
Thin films
Scanning electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films. / Noda, Suguru; Kajikawa, Yuya; Komiyama, Hiroshi.

In: Chemical Vapor Deposition, Vol. 8, No. 3, 05.2002, p. 87-89.

Research output: Contribution to journalArticle

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