Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Suguru Noda; Yuya Kajikawa; Hiroshi Komiyama

doi:10.1002/1521-3862(20020503)8:3<87::AID-CVDE87>3.0.CO;2-Q

Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Suguru Noda^*, Yuya Kajikawa, Hiroshi Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	87-89
Number of pages	3
Journal	Chemical Vapor Deposition
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/1521-3862(20020503)8:3<87::AID-CVDE87>3.0.CO;2-Q
Publication status	Published - 2002 May 1
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Surfaces and Interfaces
Process Chemistry and Technology

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10.1002/1521-3862(20020503)8:3<87::AID-CVDE87>3.0.CO;2-Q

Cite this

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title = "Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films",

author = "Suguru Noda and Yuya Kajikawa and Hiroshi Komiyama",

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journal = "Chemical Vapor Deposition",

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T1 - Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

AU - Noda, Suguru

AU - Kajikawa, Yuya

AU - Komiyama, Hiroshi

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M3 - Article

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Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

ASJC Scopus subject areas

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