Conjugated oligomers for molecular electronics: Schottky diodes on vacuum evaporated films of alpha-sexithienyl

Denis Fichou, Gilles Horowitz, Yoshinori Nishikitani, Francis Garnier

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Abstract

Alpha-sexithienyl (alpha-6T) was synthesized from alpha-terthienyl and deposited as thin films by vacuum evaporation onto tin oxide coated glass slides. Schottky junctions were then realized by evaporating aluminium dots on top of the alpha-sexithienyl layer. The metal-semiconductor diodes thus obtained show a rectifying ratio of more than 100 at 1 V.A barrier height of ca. 1.0 eV was determined from the direct current-voltage characteristic. Impedance measurements on Al/alpha-6T and Au/alpha-6T structures gave an acceptor concentration of 4 × 1017 cm-3, a conductivity of 2 × 10-7 S cm-1 and a carrier mobility of 3 × 10-6 cm2Vs. Carrier transport parameters of semiconducting alpha-6T are thus very similar to those of undoped polythiophene.

Original languageEnglish
Pages (from-to)176-178
Number of pages3
JournalChemtronics
Volume3
Issue number3
Publication statusPublished - 1988 Sep
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fichou, D., Horowitz, G., Nishikitani, Y., & Garnier, F. (1988). Conjugated oligomers for molecular electronics: Schottky diodes on vacuum evaporated films of alpha-sexithienyl. Chemtronics, 3(3), 176-178.