Abstract
Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and √3 x √3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(111) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(111)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.
Original language | English |
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Pages (from-to) | 245-258 |
Number of pages | 14 |
Journal | Phase Transitions |
Volume | 62 |
Issue number | 4 SEC. A |
Publication status | Published - 1997 Dec 1 |
Keywords
- Cooperative movement
- DAS structure
- Random motion
- Scanning Tunneling Microscopy
- Si(111)
ASJC Scopus subject areas
- Instrumentation
- Materials Science(all)