Consideration of atom movement during Si surface reconstruction

I. Ohdomari, T. Watanabe, K. Kumamoto, T. Hoshino

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and √3 x √3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(111) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(111)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.

Original languageEnglish
Pages (from-to)245-258
Number of pages14
JournalPhase Transitions
Volume62
Issue number4 SEC. A
Publication statusPublished - 1997 Dec 1

Keywords

  • Cooperative movement
  • DAS structure
  • Random motion
  • Scanning Tunneling Microscopy
  • Si(111)

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Consideration of atom movement during Si surface reconstruction'. Together they form a unique fingerprint.

Cite this