Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura

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Abstract

The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

Original languageEnglish
Article number053118
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number5
DOIs
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kanbara, T., Takenobu, T., Takahashi, T., Iwasa, Y., Tsukagoshi, K., Aoyagi, Y., & Kataura, H. (2006). Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments. Applied Physics Letters, 88(5), 1-3. [053118]. https://doi.org/10.1063/1.2171481