The fabrication of logic circuits using the inkjet technique has attracted especially strong interest owing to wide range applications such as flexible and printed electronics. Although logic circuits fabricated using the inkjet method have already been accomplished, the precise control of gate threshold voltages has not been realized yet. In this study, we have demonstrated electron doping of single-walled carbon nanotube (SWCNT) films by inkjet printing of dilute poly(ethylene imine) (PEI) ink. We have successfully obtained the continuous threshold voltage shift by varying the number of doping steps, indicating that the carrier concentration in PEI ink is much lower than that of our previous work.
ASJC Scopus subject areas
- Physics and Astronomy(all)