Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates

Koji Takeda, Erina Kanno, Takuro Fujii, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO 2 /Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
Publication statusPublished - 2016 Aug 1
Externally publishedYes
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 2016 Jun 262016 Jun 30

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

Fingerprint

DBR lasers
Membrane structures
Bias currents
Optical links
Transmitters
Electric power utilization
Modulation
Membranes
Substrates

Keywords

  • DBR laser
  • III-V on Si
  • membrane laser
  • short cavity laser
  • wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Takeda, K., Kanno, E., Fujii, T., Hasebe, K., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2016). Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528750] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528750

Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates. / Takeda, Koji; Kanno, Erina; Fujii, Takuro; Hasebe, Koichi; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528750 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takeda, K, Kanno, E, Fujii, T, Hasebe, K, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528750, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528750
Takeda K, Kanno E, Fujii T, Hasebe K, Yamamoto T, Kakitsuka T et al. Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528750. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). https://doi.org/10.1109/ICIPRM.2016.7528750
Takeda, Koji ; Kanno, Erina ; Fujii, Takuro ; Hasebe, Koichi ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).
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abstract = "We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO 2 /Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.",
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AU - Kakitsuka, Takaaki

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