Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Takehisa Kishimoto, Mikio Takai, Yoshikazu Ohno, Tadashi Nishimura, Masahide Inuishi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

Original languageEnglish
Pages (from-to)3460-3462
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number6 A
Publication statusPublished - 1997 Jun
Externally publishedYes

Fingerprint

Epitaxial layers
Induced currents
Electric current measurement
Ion beams
Diodes
diodes
Charge carriers
ion beams
Boron
dosage
Protons
proton irradiation
Irradiation
charge carriers
boron
Substrates

Keywords

  • Charge collection
  • Dynamic random-access memory
  • Epitaxial wafer
  • High-energy ion-implantation
  • Ion-beam-induced current
  • Nuclear microprobe
  • Soft error

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers. / Kishimoto, Takehisa; Takai, Mikio; Ohno, Yoshikazu; Nishimura, Tadashi; Inuishi, Masahide.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 6 A, 06.1997, p. 3460-3462.

Research output: Contribution to journalArticle

@article{9635791303b7460eb4804a210d442371,
title = "Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers",
abstract = "The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50{\%} that of a diode with a twin wells in an epitaxial layer.",
keywords = "Charge collection, Dynamic random-access memory, Epitaxial wafer, High-energy ion-implantation, Ion-beam-induced current, Nuclear microprobe, Soft error",
author = "Takehisa Kishimoto and Mikio Takai and Yoshikazu Ohno and Tadashi Nishimura and Masahide Inuishi",
year = "1997",
month = "6",
language = "English",
volume = "36",
pages = "3460--3462",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 A",

}

TY - JOUR

T1 - Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

AU - Kishimoto, Takehisa

AU - Takai, Mikio

AU - Ohno, Yoshikazu

AU - Nishimura, Tadashi

AU - Inuishi, Masahide

PY - 1997/6

Y1 - 1997/6

N2 - The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

AB - The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

KW - Charge collection

KW - Dynamic random-access memory

KW - Epitaxial wafer

KW - High-energy ion-implantation

KW - Ion-beam-induced current

KW - Nuclear microprobe

KW - Soft error

UR - http://www.scopus.com/inward/record.url?scp=0031169379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031169379&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031169379

VL - 36

SP - 3460

EP - 3462

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -