Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Takehisa Kishimoto*, Mikio Takai, Yoshikazu Ohno, Tadashi Nishimura, Masahide Inuishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

Original languageEnglish
Pages (from-to)3460-3462
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 A
Publication statusPublished - 1997 Jun
Externally publishedYes


  • Charge collection
  • Dynamic random-access memory
  • Epitaxial wafer
  • High-energy ion-implantation
  • Ion-beam-induced current
  • Nuclear microprobe
  • Soft error

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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