Abstract
Improving SWCNT device performance, namely, the precise control of carrier density using organic molecules by a solution process was carried out. Controlled carrier doping of SWCNT films using optical absorption measurements was confirmed and applied to a SWCNT-bundle FET. Saturation was observed at each doping level and increased slightly with doping. The evolution of SWCNT electronics is the tuning of switching voltages, since this is directly related to the power consumption of the devices.
Original language | English |
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Pages (from-to) | 2430-2434 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 17 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2005 Oct 17 |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)