The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.
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