Control of carrier density by self-assembled monolayers in organic field-effect transistors

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa

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Abstract

The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

Original languageEnglish
Pages (from-to)317-322
Number of pages6
JournalNature Materials
Volume3
Issue number5
DOIs
Publication statusPublished - 2004 May
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, S., Nishikawa, T., Takenobu, T., Mori, S., Shimoda, T., Mitani, T., Shimotani, H., Yoshimoto, N., Ogawa, S., & Iwasa, Y. (2004). Control of carrier density by self-assembled monolayers in organic field-effect transistors. Nature Materials, 3(5), 317-322. https://doi.org/10.1038/nmat1105