Abstract
ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 191-194 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 425 |
| DOIs | |
| Publication status | Published - 2015 Jun 20 |
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Keywords
- A1. X-ray diffraction
- A3. Molecular beam epitaxy
- B1. Sapphire
- B1. Zinc compounds
- B2. Semiconducting II-VI materials
- B3. Heterojunction semiconductor devices
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. / Nakasu, Taizo; Aiba, T.; Yamashita, S.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, Masakazu; Asahi, T.
In: Journal of Crystal Growth, Vol. 425, 20.06.2015, p. 191-194.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire
AU - Nakasu, Taizo
AU - Aiba, T.
AU - Yamashita, S.
AU - Hattori, S.
AU - Sun, W.
AU - Taguri, K.
AU - Kazami, F.
AU - Kobayashi, Masakazu
AU - Asahi, T.
PY - 2015/6/20
Y1 - 2015/6/20
N2 - ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.
AB - ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Sapphire
KW - B1. Zinc compounds
KW - B2. Semiconducting II-VI materials
KW - B3. Heterojunction semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=84979959424&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84979959424&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.02.052
DO - 10.1016/j.jcrysgro.2015.02.052
M3 - Article
VL - 425
SP - 191
EP - 194
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -