Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

T. Nakasu, T. Aiba, S. Yamashita, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi, T. Asahi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
Publication statusPublished - 2015 Jul 28

Keywords

  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Sapphire
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Sun, W., Taguri, K., Kazami, F., Kobayashi, M., & Asahi, T. (2015). Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. Journal of Crystal Growth, 425, 191-194. https://doi.org/10.1016/j.jcrysgro.2015.02.052