Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

Taizo Nakasu, T. Aiba, S. Yamashita, S. Hattori, W. Sun, K. Taguri, F. Kazami, Masakazu Kobayashi, T. Asahi

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.

    Original languageEnglish
    Pages (from-to)191-194
    Number of pages4
    JournalJournal of Crystal Growth
    Volume425
    DOIs
    Publication statusPublished - 2015 Jun 20

    Fingerprint

    Aluminum Oxide
    Buffer layers
    Molecular beam epitaxy
    Sapphire
    sapphire
    molecular beam epitaxy
    buffers
    Epilayers
    Substrates
    Annealing
    Film growth
    annealing
    Poles
    Imaging techniques
    Thin films
    Atoms
    insertion
    poles
    thin films
    atoms

    Keywords

    • A1. X-ray diffraction
    • A3. Molecular beam epitaxy
    • B1. Sapphire
    • B1. Zinc compounds
    • B2. Semiconducting II-VI materials
    • B3. Heterojunction semiconductor devices

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

    Cite this

    Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Sun, W., Taguri, K., ... Asahi, T. (2015). Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. Journal of Crystal Growth, 425, 191-194. https://doi.org/10.1016/j.jcrysgro.2015.02.052

    Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. / Nakasu, Taizo; Aiba, T.; Yamashita, S.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, Masakazu; Asahi, T.

    In: Journal of Crystal Growth, Vol. 425, 20.06.2015, p. 191-194.

    Research output: Contribution to journalArticle

    Nakasu, T, Aiba, T, Yamashita, S, Hattori, S, Sun, W, Taguri, K, Kazami, F, Kobayashi, M & Asahi, T 2015, 'Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire', Journal of Crystal Growth, vol. 425, pp. 191-194. https://doi.org/10.1016/j.jcrysgro.2015.02.052
    Nakasu, Taizo ; Aiba, T. ; Yamashita, S. ; Hattori, S. ; Sun, W. ; Taguri, K. ; Kazami, F. ; Kobayashi, Masakazu ; Asahi, T. / Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 191-194.
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