TY - JOUR
T1 - Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire
AU - Nakasu, T.
AU - Aiba, T.
AU - Yamashita, S.
AU - Hattori, S.
AU - Sun, W.
AU - Taguri, K.
AU - Kazami, F.
AU - Kobayashi, M.
AU - Asahi, T.
N1 - Funding Information:
This work was supported in part by Waseda University Research Initiatives, “Early Bird” grant for young researcher at Waseda Research Institute for Science and Engineering. The research grant from collaboration between Mitsubishi Materials Corporation and Faculty of Science and Engineering, Waseda University. The author acknowledges T. Asahi of JX Nippon Mining and Metals Corporation for the support. One of the authors (T. N.) acknowledges the support of the Foundation of Ando Laboratory.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.
AB - ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the film growth on crystallographic properties of the epilayer was investigated. Pole figure imaging and wide-range reciprocal space mapping (RSM) measurements were used to study the domain distribution within the layer, and epitaxial relationships between the ZnTe thin films and the sapphire substrates. The orientation of ZnTe domains formed on a-plane sapphire substrates was controlled by the annealing condition of the buffer layer. Two different {111} domains were formed from the sample the buffer layer was annealed at 350°C, while (100) layers were obtained from the sample the buffer layer was annealed at 300°C. These crystallographic features were probably originated from the atom arrangements of ZnTe and sapphire at the interface.
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Sapphire
KW - B1. Zinc compounds
KW - B2. Semiconducting II-VI materials
KW - B3. Heterojunction semiconductor devices
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U2 - 10.1016/j.jcrysgro.2015.02.052
DO - 10.1016/j.jcrysgro.2015.02.052
M3 - Article
AN - SCOPUS:84979959424
VL - 425
SP - 191
EP - 194
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -