Abstract
ZnO polycrystalline films have a strong tendency to grow their c -axis perpendicular to the film surface, even on an amorphous substrate. However, unusual (10 1- 0) preferred orientations in which the c -axis lies in the substrate plane are often observed when the film is exposed to ion irradiation during its growth. To investigate the effect of ion irradiation on the (10 1- 0) preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion-beam-assisted electron-beam evaporation of zinc. The results clearly indicated that the tendency of (10 1- 0) preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the (0001) preferred orientation to change into a (10 1- 0) preferred orientation which corresponds to the ion channeling direction. An in-plane preferred orientation was also obtained, probably because of deviations in the incident ion-beam direction from 5° to the substrate surface normal. These in-plane textured (10 1- 0) ZnO films, fabricated under the ion-beam irradiation of 0.5-1 keV, excited a shear acoustic wave without any longitudinal wave. The highest shear mode electromechanical coupling coefficient was found to be k15 =0.16 in the film with ion-beam irradiation of 1 keV. This k15 value corresponds to 60% of that in a ZnO single crystal (k15 =0.26).
| Original language | English |
|---|---|
| Article number | 044115 |
| Journal | Journal of Applied Physics |
| Volume | 102 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Control of in-plane and out-of-plane texture in shear mode piezoelectric ZnO films by ion-beam irradiation. / Yanagitani, Takahiko; Kiuchi, Masato.
In: Journal of Applied Physics, Vol. 102, No. 4, 044115, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Control of in-plane and out-of-plane texture in shear mode piezoelectric ZnO films by ion-beam irradiation
AU - Yanagitani, Takahiko
AU - Kiuchi, Masato
PY - 2007
Y1 - 2007
N2 - ZnO polycrystalline films have a strong tendency to grow their c -axis perpendicular to the film surface, even on an amorphous substrate. However, unusual (10 1- 0) preferred orientations in which the c -axis lies in the substrate plane are often observed when the film is exposed to ion irradiation during its growth. To investigate the effect of ion irradiation on the (10 1- 0) preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion-beam-assisted electron-beam evaporation of zinc. The results clearly indicated that the tendency of (10 1- 0) preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the (0001) preferred orientation to change into a (10 1- 0) preferred orientation which corresponds to the ion channeling direction. An in-plane preferred orientation was also obtained, probably because of deviations in the incident ion-beam direction from 5° to the substrate surface normal. These in-plane textured (10 1- 0) ZnO films, fabricated under the ion-beam irradiation of 0.5-1 keV, excited a shear acoustic wave without any longitudinal wave. The highest shear mode electromechanical coupling coefficient was found to be k15 =0.16 in the film with ion-beam irradiation of 1 keV. This k15 value corresponds to 60% of that in a ZnO single crystal (k15 =0.26).
AB - ZnO polycrystalline films have a strong tendency to grow their c -axis perpendicular to the film surface, even on an amorphous substrate. However, unusual (10 1- 0) preferred orientations in which the c -axis lies in the substrate plane are often observed when the film is exposed to ion irradiation during its growth. To investigate the effect of ion irradiation on the (10 1- 0) preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion-beam-assisted electron-beam evaporation of zinc. The results clearly indicated that the tendency of (10 1- 0) preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the (0001) preferred orientation to change into a (10 1- 0) preferred orientation which corresponds to the ion channeling direction. An in-plane preferred orientation was also obtained, probably because of deviations in the incident ion-beam direction from 5° to the substrate surface normal. These in-plane textured (10 1- 0) ZnO films, fabricated under the ion-beam irradiation of 0.5-1 keV, excited a shear acoustic wave without any longitudinal wave. The highest shear mode electromechanical coupling coefficient was found to be k15 =0.16 in the film with ion-beam irradiation of 1 keV. This k15 value corresponds to 60% of that in a ZnO single crystal (k15 =0.26).
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U2 - 10.1063/1.2772589
DO - 10.1063/1.2772589
M3 - Article
VL - 102
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 044115
ER -