Control of injected carriers in tetracyano-p-quinodimethane encapsulated carbon nanotube transistors

Masashi Shiraishi, Shuichi Nakamura, Tomohiro Fukao, Taishi Takenobu, Hiromichi Kataura, Yoshihiro Iwasa

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We examined transistor characteristics of tetracyano-p-quinodimethane encapsulated single-walled carbon nanotubes (TCNQ@SWNTs). In device operations, a clear conversion to a p -type character was observed and the stability of carriers, previously doped into SWNTs, were simultaneously clarified. Because of an energy band shift, between the electrodes and the doped SWNTs induced by the doping, electron injection was achieved only by application of a high source-drain voltage, while holes were easily injected because of decrease in hole barrier height.

Original languageEnglish
Article number093107
JournalApplied Physics Letters
Volume87
Issue number9
DOIs
Publication statusPublished - 2005 Aug 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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