Control of radical species in microwave plasma chemical vapor deposition

I. Kato, T. Yoneda, T. Matsushita, M. Yamashita

Research output: Contribution to journalArticle

Abstract

The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH4 gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH4 gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH4 gas inlet.

Original languageEnglish
Pages (from-to)97-104
Number of pages8
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume78
Issue number10
Publication statusPublished - 1995 Oct

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Chemical vapor deposition
Electron temperature
Microwaves
vapor deposition
Carrier concentration
Plasmas
microwaves
electron energy
Gases
gases
Gas discharge tubes
gas discharge tubes
Spatial distribution
spatial distribution
fragmentation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Control of radical species in microwave plasma chemical vapor deposition. / Kato, I.; Yoneda, T.; Matsushita, T.; Yamashita, M.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 78, No. 10, 10.1995, p. 97-104.

Research output: Contribution to journalArticle

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