Control of radical species in microwave plasma chemical vapor deposition

I. Kato; T. Yoneda; T. Matsushita; M. Yamashita

Control of radical species in microwave plasma chemical vapor deposition

I. Kato^*, T. Yoneda, T. Matsushita, M. Yamashita

^*Corresponding author for this work

Waseda University

Research output: Contribution to journal › Article › peer-review

Abstract

The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH₄ gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH₄ gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH₄ gas inlet.

Original language	English
Pages (from-to)	97-104
Number of pages	8
Journal	Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume	78
Issue number	10
Publication status	Published - 1995 Oct

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Control of radical species in microwave plasma chemical vapor deposition",

abstract = "The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH4 gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH4 gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH4 gas inlet.",

author = "I. Kato and T. Yoneda and T. Matsushita and M. Yamashita",

year = "1995",

month = oct,

language = "English",

volume = "78",

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journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",

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T1 - Control of radical species in microwave plasma chemical vapor deposition

AU - Kato, I.

AU - Yoneda, T.

AU - Matsushita, T.

AU - Yamashita, M.

PY - 1995/10

Y1 - 1995/10

N2 - The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH4 gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH4 gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH4 gas inlet.

AB - The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH4 gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH4 gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH4 gas inlet.

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SN - 8756-663X

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SP - 97

EP - 104

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

IS - 10

ER -

Control of radical species in microwave plasma chemical vapor deposition

Abstract

ASJC Scopus subject areas

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