Control of the porous structure of n-type silicon and its electroluminescence properties

Tetsuya Osaka*, Kako Ogasawara, Minoru Katsunuma, Toshiyuki Momma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


During the galvanostatic preparation of n-type porous silicon samples, the saturated photocurrent density was found to be the key factor determining the structure of the porous layer, which was either a homogeneously nanoporous monolayer or a double layer consisting of a nanoporous top layer and a macroporous underlayer. The electroluminescence (EL) properties of two different samples with the different layer structures showed a difference in the peak wavelength range of the spectral dependence on negative bias. The EL spectra from the samples with the double layer structure were observed over a larger spectral range than that of the samples with the monolayer structure. These results suggest that the luminescence wavelength range of n-type porous silicon can be changed by adjusting the saturated photocurrent density during anodization. Furthermore, an attempt was made to explain the blue-shift phenomenon of the EL wavelength with an increase in applied negative bias, on the basis of the correlation between the porous layer structure and the luminescence wavelength.

Original languageEnglish
Pages (from-to)69-75
Number of pages7
JournalJournal of Electroanalytical Chemistry
Issue number1-2
Publication statusPublished - 1995 Oct 31


  • Electroluminescence
  • Porous silicon

ASJC Scopus subject areas

  • Analytical Chemistry
  • Chemical Engineering(all)
  • Electrochemistry


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