Control of thin film transistor operations with polar self-assembled monolayers

Y. Iwasa, T. Nishikawa, S. Kobayashi, T. Takenobu, T. Shimoda, T. Mitani, K. Kubozono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

From the view point of materials sciences, one of the central issues in organic thin film transistors (TFTs) is the interface between different materials inherent in the device structure. For example, the interface between organic semiconductors and electrodes controls the carrier injection, while the interface between organic semiconductors and gate insulators governs the trap and carrier densities. Here, we show that interface modification with self-assembeld monolaycrs (SAMs) using polar organosilane molecules offers novel functions in organic TFTs. SAMs on SiO2 gate dielectrics was found to the carrier density at the conduction channel, while the adsorbed SAMs molecules on metal electrodes causes an ambipolar operation in fullerene TFTs. These interface modification techniques, since they are low temperature processes, provide novel opportunities for improving device manufacturing processes.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages67-72
Number of pages6
Volume871
Publication statusPublished - 2005
Externally publishedYes
Event2005 MRS Spring Meeting - San Francisco, CA
Duration: 2005 Mar 282005 Apr 1

Other

Other2005 MRS Spring Meeting
CitySan Francisco, CA
Period05/3/2805/4/1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Iwasa, Y., Nishikawa, T., Kobayashi, S., Takenobu, T., Shimoda, T., Mitani, T., & Kubozono, K. (2005). Control of thin film transistor operations with polar self-assembled monolayers. In Materials Research Society Symposium Proceedings (Vol. 871, pp. 67-72)