Control of wavelength and decay time of photoluminescence for InAs quantum dots grown on InP(311)B using the digital embedding method

Kouichi Akahane, Naokatsu Yamamoto, Toshimasa Umezawa, Tetsuya Kawanishi, Takehiro Tanaka, Shin Ichi Nakamura, Hideyuki Sotobayashi

Research output: Contribution to journalArticle

Abstract

A lattice-matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time-resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380ps in the DEM sample and 700ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.

Original languageEnglish
JournalPhysica Status Solidi (B) Basic Research
DOIs
Publication statusAccepted/In press - 2016
Externally publishedYes

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Keywords

  • InAs
  • InP
  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum dots
  • Superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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