Abstract
An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofilms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density (<10 -7 A cm-2). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices.
| Original language | English |
|---|---|
| Pages (from-to) | 3482-3487 |
| Number of pages | 6 |
| Journal | Advanced Functional Materials |
| Volume | 21 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2011 Sep 23 |
| Externally published | Yes |
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Keywords
- doping
- high-κ dielectrics
- layer-by-layer assembly
- oxide nanosheets
- site engineering
ASJC Scopus subject areas
- Biomaterials
- Electrochemistry
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Controlled polarizability of one-nanometer-thick oxide nanosheets for tailored, high-κ nanodielectrics. / Osada, Minoru; Takanashi, Genki; Li, Bao Wen; Akatsuka, Kosho; Ebina, Yasuo; Ono, Kanta; Funakubo, Hiroshi; Takada, Kazunori; Sasaki, Takayoshi.
In: Advanced Functional Materials, Vol. 21, No. 18, 23.09.2011, p. 3482-3487.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Controlled polarizability of one-nanometer-thick oxide nanosheets for tailored, high-κ nanodielectrics
AU - Osada, Minoru
AU - Takanashi, Genki
AU - Li, Bao Wen
AU - Akatsuka, Kosho
AU - Ebina, Yasuo
AU - Ono, Kanta
AU - Funakubo, Hiroshi
AU - Takada, Kazunori
AU - Sasaki, Takayoshi
PY - 2011/9/23
Y1 - 2011/9/23
N2 - An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofilms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density (<10 -7 A cm-2). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices.
AB - An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofilms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density (<10 -7 A cm-2). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices.
KW - doping
KW - high-κ dielectrics
KW - layer-by-layer assembly
KW - oxide nanosheets
KW - site engineering
UR - http://www.scopus.com/inward/record.url?scp=80052992414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052992414&partnerID=8YFLogxK
U2 - 10.1002/adfm.201100580
DO - 10.1002/adfm.201100580
M3 - Article
AN - SCOPUS:80052992414
VL - 21
SP - 3482
EP - 3487
JO - Advanced Materials for Optics and Electronics
JF - Advanced Materials for Optics and Electronics
SN - 1057-9257
IS - 18
ER -