Abstract
An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofilms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density (<10 -7 A cm-2). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices.
Original language | English |
---|---|
Pages (from-to) | 3482-3487 |
Number of pages | 6 |
Journal | Advanced Functional Materials |
Volume | 21 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2011 Sep 23 |
Externally published | Yes |
Keywords
- doping
- high-κ dielectrics
- layer-by-layer assembly
- oxide nanosheets
- site engineering
ASJC Scopus subject areas
- Biomaterials
- Electrochemistry
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials