Controlling of the Dirac band states of pb-deposited graphene by using work function difference

Y. Tsujikawa, M. Sakamoto, Y. Yokoi, M. Imamura, K. Takahashi, R. Hobara, T. Uchihashi, A. Takayama

Research output: Contribution to journalArticlepeer-review

Abstract

We have performed scanning tunneling microscope (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer Graphene (BLG) on SiC(0001) substrate to investigate the dependence of the electronic structures on Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the p bands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with appropriate selection of both the substrate and deposited material.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2020 May 14

Keywords

  • ARPES
  • Graphene
  • Lead

ASJC Scopus subject areas

  • General

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