Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy

T. Yokoya, E. Ikenaga, M. Kobata, H. Okazaki, K. Kobayashi, A. Takeuchi, A. Awaji, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, K. Kobayashi, Hiroshi Kawarada, T. Oguchi

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C 1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1-1.3 eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B 1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.

    Original languageEnglish
    Article number205117
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume75
    Issue number20
    DOIs
    Publication statusPublished - 2007 May 21

    Fingerprint

    Diamond
    Boron
    Core levels
    Photoelectron spectroscopy
    Electronic structure
    Diamonds
    boron
    photoelectric emission
    diamonds
    electronic structure
    X rays
    spectroscopy
    x rays
    Diamond films
    diamond films
    Doping (additives)
    Superconducting films
    Binding energy
    x ray absorption
    Chemical vapor deposition

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy. / Yokoya, T.; Ikenaga, E.; Kobata, M.; Okazaki, H.; Kobayashi, K.; Takeuchi, A.; Awaji, A.; Takano, Y.; Nagao, M.; Sakaguchi, I.; Takenouchi, T.; Kobayashi, K.; Kawarada, Hiroshi; Oguchi, T.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 20, 205117, 21.05.2007.

    Research output: Contribution to journalArticle

    Yokoya, T, Ikenaga, E, Kobata, M, Okazaki, H, Kobayashi, K, Takeuchi, A, Awaji, A, Takano, Y, Nagao, M, Sakaguchi, I, Takenouchi, T, Kobayashi, K, Kawarada, H & Oguchi, T 2007, 'Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy', Physical Review B - Condensed Matter and Materials Physics, vol. 75, no. 20, 205117. https://doi.org/10.1103/PhysRevB.75.205117
    Yokoya, T. ; Ikenaga, E. ; Kobata, M. ; Okazaki, H. ; Kobayashi, K. ; Takeuchi, A. ; Awaji, A. ; Takano, Y. ; Nagao, M. ; Sakaguchi, I. ; Takenouchi, T. ; Kobayashi, K. ; Kawarada, Hiroshi ; Oguchi, T. / Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 75, No. 20.
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    abstract = "Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C 1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1-1.3 eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B 1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.",
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    AU - Okazaki, H.

    AU - Kobayashi, K.

    AU - Takeuchi, A.

    AU - Awaji, A.

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    AU - Nagao, M.

    AU - Sakaguchi, I.

    AU - Takenouchi, T.

    AU - Kobayashi, K.

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    AB - Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C 1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1-1.3 eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B 1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.

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