Corporate-feed slotted waveguide array antenna in the 350-GHz band by silicon process

Karim Tekkouk, Jiro Hirokawa, Kazuki Oogimoto, Tadao Nagatsuma, Hiroyuki Seto, Yoshiyuki Inoue, Mikiko Saito

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A corporate-feed slotted waveguide array antenna with broadband characteristics in terms of gain and reflection in the 350-GHz band is proposed. To improve the etching accuracy of the thin laminated plates with the conventional diffusion bonding process, a new fabrication process has been developed, where the etching accuracy is lower than ± 5μm. In this process, the laminated plates are made with silicon wafers and etched by deep reactive ion etcher process. These are gold plated then bonded with the diffusion bonding process. The estimated effective conductivity of the gold plated wafer is 1.6 × 107 S/m. The loss per unit length is 1.1 dB/cm. A 16 × 16 element array antenna has been designed and fabricated in the 350-GHz band with the proposed process. The broadband characteristic in terms of the antenna gain is demonstrated for the first time by measurement in this frequency band. The 3-dB down gain bandwidth is 50.8 GHz in simulation and is 44.6 GHz in measurement.

Original languageEnglish
Article number7750593
Pages (from-to)217-225
Number of pages9
JournalIEEE Transactions on Antennas and Propagation
Volume65
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

Keywords

  • Corporate-feed waveguide
  • Deep reactive ion etcher (DRIE) process
  • Diffusion bonding process
  • Micromachining
  • Silicon process
  • Slotted waveguide array
  • Submillimeter wave antennas

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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