Abstract
In the originally published article, the following values were presented incorrectly: 1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Sidoped GaAsN, which are described as 6 × 10^{19} cm^{–3} and 9 × 10^{18} cm^{–3}, respectively. The correct values of them are 2 × 10^{19} cm^{–3} and 6 × 10^{18} cm^{–3}, respectively. Figure 1 and 2 with the correct values are presented below. 2) The value of n is applied for the evaluation of electron effective mass (m_{e}^{*}) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔE_{BGN}) and the increased energy of the BursteinMoss effect (E_{fn}) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Sidoped GaAsN, the correct value of m_{e}^{*} is 0.11m_{0} instead of 0.098m_{0}, where m_{0} is the electron mass. Figure 2 with the correct value is presented below. 1 Figure (Figure presented.) PL spectra of heavily Sidoped GaAsN with [Si] of 2 × 10^{19} cm^{−3} and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum. 2 Figure (Figure presented.) Temperature dependence of PL peak energy for heavily Sidoped GaAsN with [Si] of 2 × 10^{19} cm^{−3} and [N] of 0.6% and moderately Sidoped GaAsN with [Si] of 1 × 10^{18} cm^{−3} and [N] of 0.7%. The authors state that these errors do not change the scientific conclusions of the paper in any way and apologize for any confusion this may have caused.
Original language  English 

Article number  2100204 
Journal  Crystal Research and Technology 
Volume  56 
Issue number  11 
DOIs 

Publication status  Published  2021 Nov 
Externally published  Yes 
ASJC Scopus subject areas
 Chemistry(all)
 Materials Science(all)
 Condensed Matter Physics