TY - JOUR
T1 - Correction
T2 - Photoluminescence Mechanism in Heavily Si-Doped GaAsN (Crystal Research and Technology, (2021), 56, 3, (2000143), 10.1002/crat.202000143)
AU - Tsukasaki, Takashi
AU - Hiyoshi, Ren
AU - Fujita, Miki
AU - Makimoto, Toshiki
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11
Y1 - 2021/11
N2 - In the originally published article, the following values were presented incorrectly: 1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Si-doped GaAsN, which are described as 6 × 1019 cm–3 and 9 × 1018 cm–3, respectively. The correct values of them are 2 × 1019 cm–3 and 6 × 1018 cm–3, respectively. Figure 1 and 2 with the correct values are presented below. 2) The value of n is applied for the evaluation of electron effective mass (me*) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔEBGN) and the increased energy of the Burstein-Moss effect (Efn) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Si-doped GaAsN, the correct value of me* is 0.11m0 instead of 0.098m0, where m0 is the electron mass. Figure 2 with the correct value is presented below. 1 Figure (Figure presented.) PL spectra of heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum. 2 Figure (Figure presented.) Temperature dependence of PL peak energy for heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% and moderately Si-doped GaAsN with [Si] of 1 × 1018 cm−3 and [N] of 0.7%. The authors state that these errors do not change the scientific conclusions of the paper in any way and apologize for any confusion this may have caused.
AB - In the originally published article, the following values were presented incorrectly: 1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Si-doped GaAsN, which are described as 6 × 1019 cm–3 and 9 × 1018 cm–3, respectively. The correct values of them are 2 × 1019 cm–3 and 6 × 1018 cm–3, respectively. Figure 1 and 2 with the correct values are presented below. 2) The value of n is applied for the evaluation of electron effective mass (me*) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔEBGN) and the increased energy of the Burstein-Moss effect (Efn) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Si-doped GaAsN, the correct value of me* is 0.11m0 instead of 0.098m0, where m0 is the electron mass. Figure 2 with the correct value is presented below. 1 Figure (Figure presented.) PL spectra of heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum. 2 Figure (Figure presented.) Temperature dependence of PL peak energy for heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% and moderately Si-doped GaAsN with [Si] of 1 × 1018 cm−3 and [N] of 0.7%. The authors state that these errors do not change the scientific conclusions of the paper in any way and apologize for any confusion this may have caused.
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U2 - 10.1002/crat.202100204
DO - 10.1002/crat.202100204
M3 - Comment/debate
AN - SCOPUS:85118986545
VL - 56
JO - Crystal Research and Technology
JF - Crystal Research and Technology
SN - 0232-1300
IS - 11
M1 - 2100204
ER -