The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)