Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasakib, T. Sota, Y. Segawa, H. Koinuma

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Abstract

The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.

Original languageEnglish
Pages (from-to)532-534
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number4
DOIs
Publication statusPublished - 2003 Jan 27

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Koida, T., Chichibu, S. F., Uedono, A., Tsukazaki, A., Kawasakib, M., Sota, T., Segawa, Y., & Koinuma, H. (2003). Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO. Applied Physics Letters, 82(4), 532-534. https://doi.org/10.1063/1.1540220