Correlation of the 5.0- and 7.6-eV absorption bands in SiO2 with oxygen vacancy

Ryoichi Tohmon*, Hiroyasu Mizuno, Yoshimichi Ohki, Kotoku Sasagane, Kaya Nagasawa, Yoshimasa Hama

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

321 Citations (Scopus)


Various uv and vacuum-uv optical-absorption bands found in as-manufactured high-purity SiO2 glass were studied. Two types of absorption bands were found near 5.0 eV, one of which is attributed to the oxygen vacancy (?Si-Si?). The absorption band at 7.6 eV is also found to be caused by the same oxygen vacancy. Observation of the decay lifetime of photoluminescence and calculations using the ab initio molecular-orbital program show that the 7.6-eV band is caused by a singlet-to-singlet transition, while the 5.0-eV band is caused by a singlet-to-triplet transition.

Original languageEnglish
Pages (from-to)1337-1345
Number of pages9
JournalPhysical Review B
Issue number2
Publication statusPublished - 1989 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics


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