Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Yoshinari Kamakura, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.

    Original languageEnglish
    Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Pages89-92
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna
    Duration: 2010 Sep 62010 Sep 8

    Other

    Other15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
    CityBologna
    Period10/9/610/9/8

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

    Cite this

    Kamakura, Y., Mori, N., Taniguchi, K., Zushi, T., & Watanabe, T. (2010). Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 89-92). [5604561] https://doi.org/10.1109/SISPAD.2010.5604561