Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Yoshinari Kamakura, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.

Original languageEnglish
Title of host publication15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages89-92
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 6
Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
Duration: 2010 Sep 62010 Sep 8

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
CountryItaly
CityBologna
Period10/9/610/9/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Fingerprint Dive into the research topics of 'Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices'. Together they form a unique fingerprint.

  • Cite this

    Kamakura, Y., Mori, N., Taniguchi, K., Zushi, T., & Watanabe, T. (2010). Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 89-92). [5604561] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604561